2010. 6. 25 1/1 semiconductor technical data ktc9012 epitaxial planar pnp transistor revision no : 2 general purpose application. switching application. features h excellent h fe linearity. h complementary to ktc9013. maximum rating (ta=25 ? ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ electrical characteristics (ta=25 ? ) characteristic symbol rating unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v collector current i c -500 ma emitter current i e 500 ma collector power dissipation p c * 625 mw 400 junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-35v, i e =0 - - -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 a dc current gain h fe (note) v ce =-1v, i c =-50ma 64 - 246 collector-emitter saturation voltage v ce(sat) i c =-100ma, i b =-10ma - -0.1 -0.25 v base-emitter voltage v be i c =-100ma, v ce =-1v -0.8 -1.0 v transition frequency f t v cb =-6v, i c =-20ma, f=100mhz 150 - - mhz collector output capacitance c ob v cb =-6v, i e =0, f=1mhz - 7.0 - pf note : h fe classification d:64 q 91, e:78 q 112, f:96 q 135, g:118 q 166, h:144 q 202, i:176 q 246 * cu lead-frame : 625mw fe lead-frame : 400mw
2010. 6. 25 2/2 ktc9012 revision no : 2 v ce(sat) - i c collector-emitter saturation voltage v ce(sat) (v) i c - v ce collector-emitter voltage v ce (v) 0 -1 -100 0 collector current i c (ma) dc current gain h fe 500 -0.3 collector current i c (ma) collector current i c (ma) h fe - i c -2 -3 -4 -5 -200 -300 -400 -600 -500 i =-1ma 0 -2 -3 -4 -5 -6 -7 -8 b common emitter ta=25 c -1 -3 -10 -30 -1k -100 -300 10 30 50 100 300 common emitter ta =100 c ta =-25 c ta =25 c v =-6v ce ce v =-1v ta =100 c ta =-25 c ta =25 c ta =100 c ta =25 c ta =-25 c -0.5 -0.5 -1 -3 -10 -30 -1k -100 -300 -0.01 -0.03 -0.05 -0.1 -0.3 common emitter -10 base current i b ( a) -0.3 0 base-emitter voltage v be (v) i b - v be -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1 -3 -30 -100 -300 -1k common v =-6v ce i /i =10 cb emitter collector power dissipation p c (mw) 0 0 p c - ta 25 50 75 100 125 150 175 100 200 300 400 700 600 500 ambient temperature ta ( c) (low voltage region) cu fe
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